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2N2222 NPN BJT Transistor (40V 0.8A)
Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
- Collector-Emitter Voltage (VCEO): 40V
- Collector Current (Ic): 800mA
- DC Current Drain (hFE): 100 – 300
- Current Gain Bandwidth (fT): 300MHz
You can quickly find and compare our selection of BJTs with our specification list below.