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Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
Features:
- Collector-Emitter Voltage (VCEO): 25V
- Collector Current (Ic): 50mA
- DC Current Gain (hFE): 400 – 1200
- Current Gain Bandwidth (fT): 50MHz
You can quickly find and compare our selection of BJTs with our specification list below.
Documents: