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2N6517 NPN BJT Transistor (350V 0.5A)
$1.00
Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
Features:
- Collector-Emitter Voltage (VCEO): 350V
- Collector Current (Ic): 500mA
- DC Current Gain (hFE): 30 – 200
- Current Gain Bandwidth (fT): 40MHz
You can quickly find and compare our selection of BJTs with our specification list below.
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