2N6517 - NPN BJT (350V 0.5A)

TRANQ-006517


Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.

 

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Features:

  • Collector-Emitter Voltage (VCEO): 350V
  • Collector Current (Ic): 500mA
  • DC Current Gain (hFE): 30 - 200
  • Current Gain Bandwidth (fT): 40MHz

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