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Field-Effect Transistor is a type of unipolar transistor which uses an electric field to control the conductivity of a channel.
Features:
- Drain-Source Voltage (VDS): 60V
- Maximum Continuous Drain Current (ID): 200mA
- Gate Threshold Voltage (VGS): 0.8 – 3V
You can quickly find and compare our selection of FETs with our specification list below.
Documents: