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BC337 NPN BJT Transistor (45V 0.8A)
Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
- Collector-Emitter Voltage (VCEO): 45V
- Collector Current (Ic): 800mA
- DC Current Gain (hFE): 100 – 630
- Current Gain Bandwidth (fT): 100MHz
You can quickly find and compare our selection of BJTs with our specification list below.