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BC517 NPN Darlington BJT Transistor (30V 1.2A)
Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
- Collector-Emitter Voltage (VCEO): 30V
- Collector Current (Ic): 1.2A
- DC Current Gain (hFE): 30000
You can quickly find and compare our selection of BJTs with our specification list below.