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BC557 PNP BJT Transistor (-45V -0.1A)
Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.
- Collector-Emitter Voltage (VCEO): -45V
- Collector Current (Ic): -100mA
- DC Current Gain (hFE): 110 – 800
- Current Gain Bandwidth (fT): 150MHz
You can quickly find and compare our selection of BJTs with our specification list below.