BC639 – NPN BJT (80V 1A)


Bipolar Junction Transistor is a solid-state device in which the current flows between the collector and the emitter are controlled by the current flow through the base.


Product Description


  • Collector-Emitter Voltage (VCEO): 80V
  • Collector Current (Ic): 1A
  • DC Current Gain (hFE): 40 – 160
  • Current Gain Bandwidth (fT): 200MHz

You can quickly find and compare our selection of BJTs with our specification list below.


Part Number: TRANQ-000639 Categories: ,