WE WILL BE CLOSED ON SAT MAY 13
HGTG11N120 N Ch IGBT (1200V 43A)
$9.00
Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.
Features:
- Collector-Emitter Voltage (VCES): 1200V
- Continuous Collector Current (IC): 43A
- Continuous Gate-Emitter Voltage (VGES): +/-20V
- Power Dissipation (PD): 298W
You can quickly find and compare our selection of IGBTs with our specification list below.
Documents:
