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HGTG12N60C3 N Ch IGBT (600V 24A)
$6.00
Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.
Features:
- Collector-Emitter Voltage (VCES): 600V
- Continuous Collector Current (IC): 24A
- Continuous Gate-Emitter Voltage (VGES): +/-20V
- Power Dissipation (PD): 104W
You can quickly find and compare our selection of IGBTs with our specification list below.
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