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HGTG18N120 N Ch IGBT (1200V 54A)
Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.
- Collector-Emitter Voltage (VCES): 1200V
- Continuous Collector Current (IC): 54A
- Continuous Gate-Emitter Voltage (VGES): +/-20V
- Power Dissipation (PD): 390W
You can quickly find and compare our selection of IGBTs with our specification list below.