HGTG18N120 - N-Channel IGBT (1200V 54A)

TRIGB-012390


Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch. 

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Features:

  • Collector-Emitter Voltage (VCES): 1200V
  • Continuous Collector Current (IC): 54A
  • Continuous Gate-Emitter Voltage (VGES): +/-20V
  • Power Dissipation (PD): 390W

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