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Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.
Features:
- Collector-Emitter Voltage (VCES): 1200V
- Continuous Collector Current (IC): 54A
- Continuous Gate-Emitter Voltage (VGES): +/-20V
- Power Dissipation (PD): 390W
You can quickly find and compare our selection of IGBTs with our specification list below.
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