HGTG18N120 – N-Channel IGBT (1200V 54A)


Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.


Product Description


  • Collector-Emitter Voltage (VCES): 1200V
  • Continuous Collector Current (IC): 54A
  • Continuous Gate-Emitter Voltage (VGES): +/-20V
  • Power Dissipation (PD): 390W

You can quickly find and compare our selection of IGBTs with our specification list below.


Part Number: TRIGB-012390 Categories: ,