HGTG20N60 - N-Channel IGBT (600V 40A)


Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.


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  • Collector-Emitter Voltage (VCES): 600V
  • Continuous Collector Current (IC): 40A
  • Continuous Gate-Emitter Voltage (VGES): +/-20V
  • Power Dissipation (PD): 165W

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