FET Transistor

IRF520 - N-Channel MOSFET (100V 9.7A)

TRMOS-000520


Field-Effect Transistor is a type of unipolar transistor which uses an electric field to control the conductivity of a channel.

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Features:

  • Drain-Source Voltage (VDS): 100V
  • Maximum Continuous Drain Current (ID): 9.7A
  • Gate Threshold Voltage (VGS): -20 to 20V

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IRF520 - N-Channel MOSFET (100V 9.7A)

Field-Effect Transistor is a type of unipolar transistor which uses an electric field to control the conductivity of a channel.

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