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IRGP4086 N Ch IGBT (300V 70A)
Insulated-Gate Bipolar Transistor is a high efficiency and fast switching transistor. Since IGBT is a three terminal power semiconductor, it can be used as an electronic switch.
- Collector-Emitter Voltage (VCES): 300V
- Continuous Collector Current (IC): 70A
- Continuous Gate-Emitter Voltage (VGES): +/-30V
- Power Dissipation (PD): 160W
You can quickly find and compare our selection of IGBTs with our specification list below.